A novel process variation immune dopingless zero...

A novel process variation immune dopingless zero sub-threshold slope and zero impact ionization FET (DL-Z\(^{2}\)FET) based on transition metals

Singh, Sangeeta, Kondekar, P. N.
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Volume:
15
Language:
english
Journal:
Journal of Computational Electronics
DOI:
10.1007/s10825-015-0749-2
Date:
March, 2016
File:
PDF, 2.07 MB
english, 2016
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