Capability of GaN based micro-light emitting diodes...

Optics Express 2015 / 06 Vol. 23; Iss. 13

Capability of GaN based micro-light emitting diodes operated at an injection level of kA/cm^2

Jiao, Q. Q., Chen, Z. Z., Ma, J., Wang, S. Y., Li, Y., Jiang, S., Feng, Y. L., Li, J. Z., Chen, Y. F., Yu, T. J., Wang, S. F., Zhang, G. Y., Tian, P. F., Xie, E. Y., Gong, Z., Gu, E. D., Dawson, M. D.
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Volume:
23
Language:
english
Journal:
Optics Express
DOI:
10.1364/OE.23.016565
Date:
June, 2015
File:
PDF, 2.23 MB
english, 2015
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