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A 340-nm-band ultraviolet laser diode composed of GaN well layers
Yamashita, Yoji, Kuwabara, Masakazu, Torii, Kousuke, Yoshida, HarumasaVolume:
21
Language:
english
Journal:
Optics Express
DOI:
10.1364/oe.21.003133
Date:
February, 2013
File:
PDF, 1.24 MB
english, 2013