Low loss 40 Gbit/s silicon modulator based on interleaved...

Optics Express 2013 / 09 Vol. 21; Iss. 19

Low loss 40 Gbit/s silicon modulator based on interleaved junctions and fabricated on 300 mm SOI wafers

Marris-Morini, D., Baudot, C., Fédéli, J-M., Rasigade, G., Vulliet, N., Souhaité, A., Ziebell, M., Rivallin, P., Olivier, S., Crozat, P., Le Roux, X., Bouville, D., Menezo, S., Bœuf, F., Vivien, L.
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Volume:
21
Language:
english
Journal:
Optics Express
DOI:
10.1364/OE.21.022471
Date:
September, 2013
File:
PDF, 1.61 MB
english, 2013
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