Fabrication of a new type of field-effect transistor using...

Fabrication of a new type of field-effect transistor using neutralisation of shallow donors by atomic hydrogen in n-GaAs (Si)

Constant, E., Caglio, N., Chevallier, J., Pesant, J.C.
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Volume:
23
Year:
1987
Language:
english
Journal:
Electronics Letters
DOI:
10.1049/el:19870595
File:
PDF, 432 KB
english, 1987
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