Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
2015 / 09 Vol. 33; Iss. 5
Effect of Al incorporation amount upon the resistive-switching characteristics for nonvolatile memory devices using Al-doped ZnO semiconductors
Lee, Won-Ho, Kim, Eom-Ji, Yoon, Sung-MinVolume:
33
Language:
english
Journal:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
DOI:
10.1116/1.4930896
Date:
September, 2015
File:
PDF, 2.08 MB
english, 2015