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SPIE Proceedings [SPIE SPIE OPTO: Integrated Optoelectronic Devices - San Jose, CA (Saturday 24 January 2009)] Gallium Nitride Materials and Devices IV - 222-282 nm AlGaN and InAlGaN based deep-UV LEDs fabricated on high-quality AlN template
Hirayama, Hideki, Noguchi, Norimichi, Fujikawa, Sachie, Norimatsu, Jun, Kamata, Norihiko, Takano, Takayoshi, Tsubaki, Kenji, Morkoç, Hadis, Litton, Cole W., Chyi, Jen-Inn, Nanishi, Yasushi, Piprek, JoVolume:
7216
Year:
2009
Language:
english
DOI:
10.1117/12.809729
File:
PDF, 1.06 MB
english, 2009