Field-Effect Mobility of InAs Surface Channel nMOSFET With...

IEEE Transactions on Electron Devices 2015 / 8 Vol. 62; Iss. 8

Field-Effect Mobility of InAs Surface Channel nMOSFET With Low $D_{\rm it}$ Scaled Gate-Stack

Wang, Shih-Wei, Vasen, Timothy, Doornbos, Gerben, Oxland, Richard, Chang, Shang-Wen, Li, Xu, Contreras-Guerrero, Rocio, Holland, Martin, Wang, Chien-Hsun, Edirisooriya, Madhavie, Rojas-Ramirez, Juan S
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Volume:
62
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2015.2445854
Date:
August, 2015
File:
PDF, 2.94 MB
english, 2015
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