Impact ionization breakdown of n-GaAs in high magnetic...

Semiconductor Science and Technology 1999 / 12 Vol. 14; Iss. 12

Impact ionization breakdown of n-GaAs in high magnetic fields

Samuilov, V A, Ksenevich, V K, Remenyi, G, Kiss, G, Pödör, B
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Volume:
14
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/14/12/313
Date:
December, 1999
File:
PDF, 464 KB
english, 1999
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