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Modelling of the current-voltage characteristics of InAs/AlGaSb/GaSb double barrier diodes with interband resonant tunnelling
Lapushkin, I, Zakharova, A, Gergel, VVolume:
14
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/14/8/312
Date:
August, 1999
File:
PDF, 157 KB
english, 1999