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Relatively large electric-field induced electron drift velocity observed in an In x Ga 1 x As-based p–i–n semiconductor nanostructure
Liang, W, Tsen, K T, Ferry, D K, Wu, Meng-Chyi, Ho, Chong-Long, Ho, Wen-JengVolume:
19
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/19/4/008
Date:
April, 2004
File:
PDF, 132 KB
english, 2004