N–p–n bipolar-junction-transistor detector with integrated...

Semiconductor Science and Technology 2006 / 02 Vol. 21; Iss. 2

N–p–n bipolar-junction-transistor detector with integrated p–n–p biasing transistor—feasibility study, design and first experimental results

Verzellesi, Giovanni, Bergamini, Davide, Betta, Gian-Franco Dalla, Piemonte, Claudio, Boscardin, Maurizio, Bosisio, Luciano, Bettarini, Stefano, Batignani, Giovanni
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Volume:
21
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/21/2/018
Date:
February, 2006
File:
PDF, 358 KB
english, 2006
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