Ultra-short n-MOSFETs with strained Si: device performance...

Semiconductor Science and Technology 2006 / 04 Vol. 21; Iss. 4

Ultra-short n-MOSFETs with strained Si: device performance and the effect of ballistic transport using Monte Carlo simulation

Aubry-Fortuna, Valérie, Bournel, Arnaud, Dollfus, Philippe, Galdin-Retailleau, Sylvie
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Volume:
21
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/21/4/003
Date:
April, 2006
File:
PDF, 242 KB
english, 2006
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