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Experimental investigation of noise in 4H–SiC p + –n–n + junctions
Arpatzanis, N, Tassis, D H, Dimitriadis, C A, Zekentes, K, Camara, NVolume:
21
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/21/5/003
Date:
May, 2006
File:
PDF, 60 KB
english, 2006