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The effect of AlAs submonolayer insertion on the oscillator strength of excitons in GaAs/AlGaAs quantum wells
Mejri, C, Chaouache, M, Maaref, M, Voisin, P, Gerard, J MVolume:
21
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/21/8/005
Date:
August, 2006
File:
PDF, 433 KB
english, 2006