Relaxation of electrical properties of n-type layers formed...

Relaxation of electrical properties of n-type layers formed by ion milling in epitaxial HgCdTe doped with V-group acceptors

Bogoboyashchyy, V V, Izhnin, I I, Mynbaev, K D, Pociask, M, Vlasov, A P
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Volume:
21
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/21/8/028
Date:
August, 2006
File:
PDF, 202 KB
english, 2006
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