The effect of carbon on neutral base recombination in...

Semiconductor Science and Technology 2007 / 01 Vol. 22; Iss. 1

The effect of carbon on neutral base recombination in high-speed SiGeC heterojunction bipolar transistors

Barbalat, Benoît, Schwartzmann, Thierry, Chevalier, Pascal, Vandelle, Benoît, Rubaldo, Laurent, Lachater, Anne, Saguin, Fabienne, Zerounian, Nicolas, Aniel, Frédéric, Chantre, Alain
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Volume:
22
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/22/1/S23
Date:
January, 2007
File:
PDF, 270 KB
english, 2007
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