Highly tensile strained silicon–carbon alloys epitaxially...

Semiconductor Science and Technology 2007 / 01 Vol. 22; Iss. 1

Highly tensile strained silicon–carbon alloys epitaxially grown into recessed source drain areas of NMOS devices

Bauer, Matthias, Machkaoutsan, Vladimir, Arena, Chantal
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Volume:
22
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/22/1/S43
Date:
January, 2007
File:
PDF, 445 KB
english, 2007
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