GaAs pseudomorphic HEMT with insulating gate films formed...

Semiconductor Science and Technology 2008 / 03 Vol. 23; Iss. 3

GaAs pseudomorphic HEMT with insulating gate films formed by P 2 S 5 /(NH 4 ) 2 S X sulfurization of recessed GaAs surface

Chiu, Hsien-Chin, Huang, Yuan-Chang, Chang, Liann-Be, Chien, Feng-Tso
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Volume:
23
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/23/3/035029
Date:
March, 2008
File:
PDF, 616 KB
english, 2008
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