Absorption and transport properties of Si rich oxide layers...

Semiconductor Science and Technology 2008 / 04 Vol. 23; Iss. 4

Absorption and transport properties of Si rich oxide layers annealed at various temperatures

Nesheva, D, Nedev, N, Levi, Z, Brüggemann, R, Manolov, E, Kirilov, K, Meier, S
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Volume:
23
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/23/4/045015
Date:
April, 2008
File:
PDF, 435 KB
english, 2008
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