Radiation-induced defects in Czochralski-grown silicon...

Semiconductor Science and Technology 2009 / 07 Vol. 24; Iss. 7

Radiation-induced defects in Czochralski-grown silicon containing carbon and germanium

Londos, C A, Andrianakis, A, Emtsev, V V, Ohyama, H
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Volume:
24
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/24/7/075002
Date:
July, 2009
File:
PDF, 163 KB
english, 2009
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