Effects of Si-cap thickness and temperature on device...

Semiconductor Science and Technology 2010 / 04 Vol. 25; Iss. 4

Effects of Si-cap thickness and temperature on device performance of Si/Ge 1− x C x /Si p-MOSFETs

Jamil, Mustafa, Liu, En-Shao, Ferdousi, Fahmida, Donnelly, Joseph P, Tutuc, Emanuel, Banerjee, Sanjay K
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Volume:
25
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/25/4/045005
Date:
April, 2010
File:
PDF, 819 KB
english, 2010
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