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The influence of the heating rate on the annealing behaviour of arsenic-implanted silicon
Hasenack, C M, Souza, J P de, Erichsen, RVolume:
3
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/3/10/003
Date:
October, 1988
File:
PDF, 449 KB
english, 1988