Defects in tin pre-amorphised p +...

Semiconductor Science and Technology 1989 / 05 Vol. 4; Iss. 5

Defects in tin pre-amorphised p + n junctions in silicon

Ayres, J R, Brotherton, S D, Clegg, J B, Gill, A, Gowers, J P
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Volume:
4
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/4/5/012
Date:
May, 1989
File:
PDF, 822 KB
english, 1989
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