Photoluminescence at high pressures from highly strained MOVPE grown GaAs/GaSb/GaAs heterostructures
Warburton, R J, Beales, T P, Mason, N J, Nicholas, R J, Walker, P JVolume:
6
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/6/6/022
Date:
June, 1991
File:
PDF, 542 KB
english, 1991