Characterisation of oxidation-induced stacking faults in...

Semiconductor Science and Technology 1992 / 01 Vol. 7; Iss. 1A

Characterisation of oxidation-induced stacking faults in SOI structures by a new chemical etching process

Tsamis, C, Tsoukalas, D, Guillemot, N, Stoemenos, J, Margail, J
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Volume:
7
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/7/1A/037
Date:
January, 1992
File:
PDF, 357 KB
english, 1992
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