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Characterisation of aluminium nitride layers formed directly by 700-800 keV 15 N 2+ implantation into aluminium
Kido, Y, Kakeno, M, Yamada, K, Hioki, TVolume:
15
Language:
english
Journal:
Journal of Physics D: Applied Physics
DOI:
10.1088/0022-3727/15/10/025
Date:
October, 1982
File:
PDF, 496 KB
english, 1982