Dry etching of SiC in inductively coupled Cl...

Journal of Physics D Applied Physics 2004 / 07 Vol. 37; Iss. 13

Dry etching of SiC in inductively coupled Cl 2 /Ar plasma

Jiang, Liudi, Plank, N O V, Blauw, M A, Cheung, R, Drift, E van der
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Volume:
37
Language:
english
Journal:
Journal of Physics D: Applied Physics
DOI:
10.1088/0022-3727/37/13/012
Date:
July, 2004
File:
PDF, 302 KB
english, 2004
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