Effect of hot carrier stress on RF reliability of 40 nm...

Journal of Physics D Applied Physics 2008 / 11 Vol. 41; Iss. 22

Effect of hot carrier stress on RF reliability of 40 nm PMOSFETs with and without SiGe source/drain

Tang, Mao-Chyuan, Fang, Yean-Kuen, Wei, Sun-Chin, Chen, David C, Yeh, Chune-Sin, Huang-Lu, Shiang
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Volume:
41
Language:
english
Journal:
Journal of Physics D: Applied Physics
DOI:
10.1088/0022-3727/41/22/225107
Date:
November, 2008
File:
PDF, 456 KB
english, 2008
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