High-barrier rectifying contacts on undoped ZnO films with...

Journal of Physics D Applied Physics 2009 / 04 Vol. 42; Iss. 7

High-barrier rectifying contacts on undoped ZnO films with (NH 4 ) 2 S x treatment owing to Fermi-level pinning

Lin, Yow-Jon, Chang, Shih-Sheng, Chang, Hsing-Cheng, Liu, Yang-Chun
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Volume:
42
Language:
english
Journal:
Journal of Physics D: Applied Physics
DOI:
10.1088/0022-3727/42/7/075308
Date:
April, 2009
File:
PDF, 488 KB
english, 2009
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