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Al 2 O 3 /Ga 2 O 3 (Gd 2 O 3 ) passivation on In 0.20 Ga 0.80 As/GaAs—structural intactness with high-temperature annealing
Lee, Y J, Lee, C H, Tung, L T, Chiang, T H, Lai, T Y, Kwo, J, Hsu, C-H, Hong, MVolume:
43
Language:
english
Journal:
Journal of Physics D: Applied Physics
DOI:
10.1088/0022-3727/43/13/135101
Date:
April, 2010
File:
PDF, 568 KB
english, 2010