Low-Threshold and High-Power Oxide-Confined 850 nm AlInGaAs...

Chinese Physics Letters 2005 / 12 Vol. 22; Iss. 12

Low-Threshold and High-Power Oxide-Confined 850 nm AlInGaAs Strained Quantum-Well Vertical-Cavity Surface-Emitting Lasers Based on Intra-Cavity Contacted Structure

Min, Chen, Xia, Guo, Jun, Deng, Hong-Xing, Gai, Li-Min, Dong, Hong-Wei, Qu, Bao-Lu, Guan, Guo, Gao, Guang-Di, Shen
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Volume:
22
Language:
english
Journal:
Chinese Physics Letters
DOI:
10.1088/0256-307X/22/12/025
Date:
December, 2005
File:
PDF, 256 KB
english, 2005
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