Characterization of Si-SiO 2 interface states in MOS capacitors by using DLTS technique
Liwu, Lu, Groesendken, G, Hasenack, CVolume:
6
Language:
english
Journal:
Chinese Physics Letters
DOI:
10.1088/0256-307X/6/12/005
Date:
December, 1989
File:
PDF, 222 KB
english, 1989