A channelling and conversion electron Mossbauer...

Semiconductor Science and Technology 1986 / 10 Vol. 1; Iss. 4

A channelling and conversion electron Mossbauer spectroscopy study of annealing behaviour of tin implanted silicon

Scherer, Elza M, Souza, J P de, Hasenack, C M, Baumvol, I J R
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Volume:
1
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/1/4/002
Date:
October, 1986
File:
PDF, 603 KB
english, 1986
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