Investigation of InGaP/GaAs double-delta-doped...

Semiconductor Science and Technology 1998 / 06 Vol. 13; Iss. 6

Investigation of InGaP/GaAs double-delta-doped heterojunction bipolar transistor

Wang, W-C, Cheng, S-Y, Chang, W-L, Pan, H-J, Shie, Y-H, Liu, W-C
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Volume:
13
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/13/6/015
Date:
June, 1998
File:
PDF, 140 KB
english, 1998
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