Dislocation structure and photoluminescence of partially...

Semiconductor Science and Technology 1999 / 06 Vol. 14; Iss. 6

Dislocation structure and photoluminescence of partially relaxed SiGe layers on Si(001) substrates

Steinman, E A, Vdovin, V I, Yugova, T G, Avrutin, V S, Izyumskaya, N F
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Volume:
14
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/14/6/316
Date:
June, 1999
File:
PDF, 676 KB
english, 1999
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