Numerical and experimental study of a 0.25 µm...

Semiconductor Science and Technology 2002 / 11 Vol. 17; Iss. 11

Numerical and experimental study of a 0.25 µm fully-depleted silicon-on-insulator MOSFET: static and dynamic radio-frequency behaviour

Rengel, R, Mateos, J, Pardo, D, Gonz lez, T, Mart n, M J, Dambrine, G, Danneville, F, Raskin, J-P
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Volume:
17
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/17/11/303
Date:
November, 2002
File:
PDF, 381 KB
english, 2002
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