Hole mobility enhancement in strained-Si/strained-SiGe...

Semiconductor Science and Technology 2004 / 05 Vol. 19; Iss. 5

Hole mobility enhancement in strained-Si/strained-SiGe heterostructure p-MOSFETs fabricated on SiGe-on-insulator (SGOI)

Cheng, Zhiyuan, Jung, Jongwan, Lee, Minjoo L, Pitera, Arthur J, Hoyt, Judy L, Antoniadis, Dimitri A, Fitzgerald, Eugene A
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Volume:
19
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/19/5/L02
Date:
May, 2004
File:
PDF, 89 KB
english, 2004
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