A 1.5 µm n-type InGaAsP/InGaAsP modulation-doped multiple...

Semiconductor Science and Technology 2006 / 03 Vol. 21; Iss. 3

A 1.5 µm n-type InGaAsP/InGaAsP modulation-doped multiple quantum well DFB laser by MOCVD

Zhang, Ruiying, Wang, Wei, Zhou, Fan, Wang, Baojun, Wang, Lufeng, Bian, Jing, Zhao, Lingjuan, Zhu, Hongliang, Jian, Shuisheng
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Volume:
21
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/21/3/018
Date:
March, 2006
File:
PDF, 263 KB
english, 2006
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