Oxygen precipitate denuded zone formation in Czochralski...

Semiconductor Science and Technology 2007 / 12 Vol. 22; Iss. 12

Oxygen precipitate denuded zone formation in Czochralski silicon wafer based on rapid thermal processing in nitrogen ambient

Fu, Liming, Yang, Deren, Ma, Xiangyang, Jiang, Hanqin, Que, Duanlin
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Volume:
22
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/22/12/011
Date:
December, 2007
File:
PDF, 503 KB
english, 2007
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