A full analytical model of fringing-field-induced parasitic...

Semiconductor Science and Technology 2010 / 01 Vol. 25; Iss. 1

A full analytical model of fringing-field-induced parasitic capacitance for nano-scaled MOSFETs

Liu, Xi, Jin, Xiaoshi, Lee, Jung-Hee, Zhu, Lei, Kwon, Hyuck-In, Lee, Jong-Ho
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Volume:
25
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/25/1/015008
Date:
January, 2010
File:
PDF, 267 KB
english, 2010
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