Complex model for plasma-enhanced heteroepitaxial...

Semiconductor Science and Technology 1992 / 02 Vol. 7; Iss. 2

Complex model for plasma-enhanced heteroepitaxial deposition of A 2 B 6 semiconductor compounds using MOC

Ershov, S N, Vasilevskiy, M I, Benushis, T I, Gurilev, B V, Ozerov, A B
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Volume:
7
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/7/2/012
Date:
February, 1992
File:
PDF, 616 KB
english, 1992
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