The PHOTOFET method in submicrometre GaAs MESFETS:...

Semiconductor Science and Technology 1992 / 07 Vol. 7; Iss. 7

The PHOTOFET method in submicrometre GaAs MESFETS: substrate leakage current effect

Papaioannou, G J, Ioannou-Sougleridis, V, Lalinski, T, Kuzmik, J, Porges, M, Kourkoutas, C D
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Volume:
7
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/7/7/011
Date:
July, 1992
File:
PDF, 360 KB
english, 1992
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