Study of argon-irradiation-induced defects and amorphization in silicon using a positron beam, Raman spectroscopy and ion channelling
G. Amarendra, G. V. Rao, A. K. Arora, K. G. M. Nair, T. R. Ravindran, K. Sekar, B. Sundarvel, B. ViswanathanYear:
1999
Language:
english
DOI:
10.1088/0953-8984/11/30/316
File:
PDF, 175 KB
english, 1999