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Effect of annealing on photoluminescence and microstructures of InGaN/GaN multi-quantum well with Mg-doped p-type GaN
L. Zhong-hui, Y. Tong-jun, Y. Zhi-jian, F. Yu-chun, Z. Guo-yi, G. Bao-ping, N. Han-benYear:
2005
Language:
english
DOI:
10.1088/1009-1963/14/4/034
File:
PDF, 370 KB
english, 2005