Nanoscale Electrostructural Characterization of Compositionally Graded Al x Ga 1– x N Heterostructures on GaN/Sapphire (0001) Substrate
Kuchuk, Andrian V., Lytvyn, Petro M., Li, Chen, Stanchu, Hryhorii V., Mazur, Yuriy I., Ware, Morgan E., Benamara, Mourad, Ratajczak, Renata, Dorogan, Vitaliy, Kladko, Vasyl P., Belyaev, Alexander E.,Language:
english
Journal:
ACS Applied Materials & Interfaces
DOI:
10.1021/acsami.5b07924
Date:
October, 2015
File:
PDF, 1.39 MB
english, 2015