Normally Off AlGaN/GaN MIS-High Electron Mobility Transistors Fabricated by Using Low Pressure Chemical Vapor Deposition Si<sub>3</sub>N<sub>4 </sub>Gate Dielectric and Standard Fluorine Ion Implantation
Zhang, ZhiLi, Fu, Kai, Deng, Xuguang, Zhang, Xiaodong, Fan, Yaming, Sun, Shichuang, Song, Liang, Xing, Zheng, Huang, Wei, Yu, Guohao, Cai, Yong, Zhang, BaoshunYear:
2015
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2015.2483760
File:
PDF, 746 KB
english, 2015