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Capacitance-voltage characteristics of (Al/Ti)/Al2O3/n-GaN MIS structures
Ivanov, P. A., Potapov, A. S., Nikolaev, A. E., Lundin, V. V., Sakharov, A. V., Tsatsulnikov, A. F., Afanas’ev, A. V., Romanov, A. A., Osachev, E. V.Volume:
49
Language:
english
Journal:
Semiconductors
DOI:
10.1134/S1063782615080096
Date:
August, 2015
File:
PDF, 228 KB
english, 2015