Improvement of surface leakage current of 2.6 µm InGaAs photodetectors by using inductive coupled plasma chemical vapor deposition technology
Ji, Xiaoli, Liu, Baiqing, Tang, Hengjing, Li, Xue, Shi, Ming, Zhou, Ying, Xu, Yue, Gong, Haimei, Yan, FengVolume:
54
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.54.04DG09
Date:
April, 2015
File:
PDF, 575 KB
english, 2015