![](/img/cover-not-exists.png)
High-Performance Ge Metal–Oxide–Semiconductor Field-Effect Transistors with a Gate Stack Fabricated by Ultrathin SiO 2 /GeO 2 Bilayer Passivation
Yamamoto, Keisuke, Ueno, Ryuji, Yamanaka, Takeshi, Hirayama, Kana, Yang, Haigui, Wang, Dong, Nakashima, HiroshiVolume:
4
Language:
english
Journal:
Applied Physics Express
DOI:
10.1143/APEX.4.051301
Date:
April, 2011
File:
PDF, 517 KB
english, 2011