High-Performance Ge Metal–Oxide–Semiconductor Field-Effect...

High-Performance Ge Metal–Oxide–Semiconductor Field-Effect Transistors with a Gate Stack Fabricated by Ultrathin SiO 2 /GeO 2 Bilayer Passivation

Yamamoto, Keisuke, Ueno, Ryuji, Yamanaka, Takeshi, Hirayama, Kana, Yang, Haigui, Wang, Dong, Nakashima, Hiroshi
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
4
Language:
english
Journal:
Applied Physics Express
DOI:
10.1143/APEX.4.051301
Date:
April, 2011
File:
PDF, 517 KB
english, 2011
Conversion to is in progress
Conversion to is failed